PART |
Description |
Maker |
AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
TC1601 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
TC1404N |
0.5W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
|
PD-1500-F PD-8500 |
GaAs PIN PD MODULES GaAs PIN PHOTODIODE WITH RECEPTACLE GaAs PIN型帕金森模块砷化镓PIN光电二极管与插座
|
Optoway Technology Inc. Optoway Technology, Inc.
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
FLL21E060IY |
High Power GaAs FET
|
Eudyna Devices
|
HMC132 |
GaAs MMIC HIGH-ISOLATION
|
Hittite Microwave Corporation
|
SW-439 SW-439SMB SW-439TR |
GaAs High Isolation Switch DC - 3.0 GHz
|
M/A-COM Technology Solutions, Inc.
|